Phase Separation in Ge-Rich GeSbTe at Different Length Scales: Melt-Quenched Bulk versus Annealed Thin Films

Integration of the prototypical GeSbTe (GST) ternary alloys, especially on the GeTe-Sb(2)Te(3) tie-line, into non-volatile memory and nanophotonic devices is a relatively mature field of study. Nevertheless, the search for the next best active material with outstanding properties is still ongoing. T...

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Detalles Bibliográficos
Autores principales: Yimam, Daniel Tadesse, Van Der Ree, A. J. T., Abou El Kheir, Omar, Momand, Jamo, Ahmadi, Majid, Palasantzas, George, Bernasconi, Marco, Kooi, Bart J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9143932/
https://www.ncbi.nlm.nih.gov/pubmed/35630939
http://dx.doi.org/10.3390/nano12101717

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