THz MEMS Switch Design

In this work, an mm-wave/THz MEMS switch design process is presented. The challenges and solutions associated with the switch electrical design, modeling, fabrication, and test are explored and discussed. To investigate the feasibility of this design process, the switches are designed on both silico...

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Detalles Bibliográficos
Autores principales: Feng, Yukang, Tsao, Han-yu, Barker, N. Scott
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9145249/
https://www.ncbi.nlm.nih.gov/pubmed/35630211
http://dx.doi.org/10.3390/mi13050745
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author Feng, Yukang
Tsao, Han-yu
Barker, N. Scott
author_facet Feng, Yukang
Tsao, Han-yu
Barker, N. Scott
author_sort Feng, Yukang
collection PubMed
description In this work, an mm-wave/THz MEMS switch design process is presented. The challenges and solutions associated with the switch electrical design, modeling, fabrication, and test are explored and discussed. To investigate the feasibility of this design process, the switches are designed on both silicon and fused quartz substrate and then tested in the 140–750 GHz frequency range. The measurement fits design expectations and simulation well. At 750 GHz the measurement results from switches on both substrates have an ON state insertion loss of less than 3 dB and an OFF state isolation larger than 12 dB.
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spelling pubmed-91452492022-05-29 THz MEMS Switch Design Feng, Yukang Tsao, Han-yu Barker, N. Scott Micromachines (Basel) Article In this work, an mm-wave/THz MEMS switch design process is presented. The challenges and solutions associated with the switch electrical design, modeling, fabrication, and test are explored and discussed. To investigate the feasibility of this design process, the switches are designed on both silicon and fused quartz substrate and then tested in the 140–750 GHz frequency range. The measurement fits design expectations and simulation well. At 750 GHz the measurement results from switches on both substrates have an ON state insertion loss of less than 3 dB and an OFF state isolation larger than 12 dB. MDPI 2022-05-08 /pmc/articles/PMC9145249/ /pubmed/35630211 http://dx.doi.org/10.3390/mi13050745 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Feng, Yukang
Tsao, Han-yu
Barker, N. Scott
THz MEMS Switch Design
title THz MEMS Switch Design
title_full THz MEMS Switch Design
title_fullStr THz MEMS Switch Design
title_full_unstemmed THz MEMS Switch Design
title_short THz MEMS Switch Design
title_sort thz mems switch design
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9145249/
https://www.ncbi.nlm.nih.gov/pubmed/35630211
http://dx.doi.org/10.3390/mi13050745
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AT tsaohanyu thzmemsswitchdesign
AT barkernscott thzmemsswitchdesign

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