Hole Injection Effect and Dynamic Characteristic Analysis of Normally Off p-GaN HEMT with AlGaN Cap Layer on Low-Resistivity SiC Substrate

A p-GaN HEMT with an AlGaN cap layer was grown on a low resistance SiC substrate. The AlGaN cap layer had a wide band gap which can effectively suppress hole injection and improve gate reliability. In addition, we selected a 0° angle and low resistance SiC substrate which not only substantially redu...

Descripción completa

Detalles Bibliográficos
Autores principales: Wang, Hsiang-Chun, Liu, Chia-Hao, Huang, Chong-Rong, Chiu, Hsien-Chin, Kao, Hsuan-Ling, Liu, Xinke
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9145364/
https://www.ncbi.nlm.nih.gov/pubmed/35630274
http://dx.doi.org/10.3390/mi13050807

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9145364/
https://www.ncbi.nlm.nih.gov/pubmed/35630274
http://dx.doi.org/10.3390/mi13050807

Ejemplares similares