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High-Performance Waveguide-Integrated Ge/Si Avalanche Photodetector with Lateral Multiplication Region
High-performance waveguide-integrated Ge/Si APDs in separate absorption, charge, and multiplication (SACM) schemes have been exploited to facilitate energy-efficient optical communication and interconnects. However, the charge layer design is complex and time-consuming. A waveguide-integrated Ge/Si...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9145896/ https://www.ncbi.nlm.nih.gov/pubmed/35630116 http://dx.doi.org/10.3390/mi13050649 |
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author | Liu, Daoqun Zhang, Peng Tang, Bo Wang, Wenwu Li, Zhihua |
author_facet | Liu, Daoqun Zhang, Peng Tang, Bo Wang, Wenwu Li, Zhihua |
author_sort | Liu, Daoqun |
collection | PubMed |
description | High-performance waveguide-integrated Ge/Si APDs in separate absorption, charge, and multiplication (SACM) schemes have been exploited to facilitate energy-efficient optical communication and interconnects. However, the charge layer design is complex and time-consuming. A waveguide-integrated Ge/Si avalanche photodetector (APD) is proposed in a separate absorption and multiplication (SAM) configuration. The device can work at low voltage and high speed with a lateral multiplication region without complexity of the charge layer. The proposed device is implemented by the complementary metal-oxide-semiconductor (CMOS) process in the 8-inch Si photonics platform. The device has a low breakdown voltage of 12 V and shows high responsivity of 15.1 A/W at 1550 nm wavelength under optical power of −22.49 dBm, corresponding to a multiplication gain of 18.1. Moreover, an opto-electrical bandwidth of 20.7 GHz is measured at 10.6 V. The high-speed performance at low voltage shows a great potential to implement high-energy-efficient Si optical communications and interconnections. |
format | Online Article Text |
id | pubmed-9145896 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-91458962022-05-29 High-Performance Waveguide-Integrated Ge/Si Avalanche Photodetector with Lateral Multiplication Region Liu, Daoqun Zhang, Peng Tang, Bo Wang, Wenwu Li, Zhihua Micromachines (Basel) Article High-performance waveguide-integrated Ge/Si APDs in separate absorption, charge, and multiplication (SACM) schemes have been exploited to facilitate energy-efficient optical communication and interconnects. However, the charge layer design is complex and time-consuming. A waveguide-integrated Ge/Si avalanche photodetector (APD) is proposed in a separate absorption and multiplication (SAM) configuration. The device can work at low voltage and high speed with a lateral multiplication region without complexity of the charge layer. The proposed device is implemented by the complementary metal-oxide-semiconductor (CMOS) process in the 8-inch Si photonics platform. The device has a low breakdown voltage of 12 V and shows high responsivity of 15.1 A/W at 1550 nm wavelength under optical power of −22.49 dBm, corresponding to a multiplication gain of 18.1. Moreover, an opto-electrical bandwidth of 20.7 GHz is measured at 10.6 V. The high-speed performance at low voltage shows a great potential to implement high-energy-efficient Si optical communications and interconnections. MDPI 2022-04-19 /pmc/articles/PMC9145896/ /pubmed/35630116 http://dx.doi.org/10.3390/mi13050649 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Liu, Daoqun Zhang, Peng Tang, Bo Wang, Wenwu Li, Zhihua High-Performance Waveguide-Integrated Ge/Si Avalanche Photodetector with Lateral Multiplication Region |
title | High-Performance Waveguide-Integrated Ge/Si Avalanche Photodetector with Lateral Multiplication Region |
title_full | High-Performance Waveguide-Integrated Ge/Si Avalanche Photodetector with Lateral Multiplication Region |
title_fullStr | High-Performance Waveguide-Integrated Ge/Si Avalanche Photodetector with Lateral Multiplication Region |
title_full_unstemmed | High-Performance Waveguide-Integrated Ge/Si Avalanche Photodetector with Lateral Multiplication Region |
title_short | High-Performance Waveguide-Integrated Ge/Si Avalanche Photodetector with Lateral Multiplication Region |
title_sort | high-performance waveguide-integrated ge/si avalanche photodetector with lateral multiplication region |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9145896/ https://www.ncbi.nlm.nih.gov/pubmed/35630116 http://dx.doi.org/10.3390/mi13050649 |
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