Ab Initio Study on Dopant Relaxation Mechanism in Ti and Ce Cationically Substituted in Wurtzite Gallium Nitride

The changes in properties of materials upon introduction of impurities is well documented but less is known about the location of foreign atoms in different hosts. This study is carried out with the motivation to explore dopant location in hexagonal GaN using density functional theory based calculat...

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Detalles Bibliográficos
Autores principales: Alkhedher, Mohammad, Majid, Abdul, Bulut, Niyazi, Elkhatib, Samah Elsayed
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9146178/
https://www.ncbi.nlm.nih.gov/pubmed/35629626
http://dx.doi.org/10.3390/ma15103599

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9146178/
https://www.ncbi.nlm.nih.gov/pubmed/35629626
http://dx.doi.org/10.3390/ma15103599

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