Interface Analysis of MOCVD Grown GeTe/Sb(2)Te(3) and Ge-Rich Ge-Sb-Te/Sb(2)Te(3) Core-Shell Nanowires

Controlling material thickness and element interdiffusion at the interface is crucial for many applications of core-shell nanowires. Herein, we report the thickness-controlled and conformal growth of a Sb(2)Te(3) shell over GeTe and Ge-rich Ge-Sb-Te core nanowires synthesized via metal-organic chemi...

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Detalles Bibliográficos
Autores principales: Kumar, Arun, Mirshokraee, Seyed Ariana, Lamperti, Alessio, Cantoni, Matteo, Longo, Massimo, Wiemer, Claudia
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9146787/
https://www.ncbi.nlm.nih.gov/pubmed/35630844
http://dx.doi.org/10.3390/nano12101623

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9146787/
https://www.ncbi.nlm.nih.gov/pubmed/35630844
http://dx.doi.org/10.3390/nano12101623

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