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An Electrochromic Ag-Decorated WO(3−x) Film with Adjustable Defect States for Electrochemical Surface-Enhanced Raman Spectroscopy

Electrochemical surface-enhanced Raman scattering (EC-SERS) spectroscopy is an ultrasensitive spectro-electrochemistry technique that provides mechanistic and dynamic information on electrochemical interfaces at the molecular level. However, the plasmon-mediated photocatalysis hinders the intrinsic...

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Detalles Bibliográficos
Autores principales: Qu, Siqi, Guan, Jing, Cai, Dongqi, Wang, Qianshuo, Wang, Xiuyun, Song, Wei, Ji, Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9146956/
https://www.ncbi.nlm.nih.gov/pubmed/35630860
http://dx.doi.org/10.3390/nano12101637
Descripción
Sumario:Electrochemical surface-enhanced Raman scattering (EC-SERS) spectroscopy is an ultrasensitive spectro-electrochemistry technique that provides mechanistic and dynamic information on electrochemical interfaces at the molecular level. However, the plasmon-mediated photocatalysis hinders the intrinsic electrochemical behavior of molecules at electrochemical interfaces. This work aimed to develop a facile method for constructing a reliable EC-SERS substrate that can be used to study the molecular dynamics at electrochemical interfaces. Herein, a novel Ag-WO(3−x) electrochromic heterostructure was synthesized for EC-SERS. Especially, the use of electrochromic WO(3−x) film suppresses the influence of hot-electrons-induced catalysis while offering a reliable SERS effect. Based on this finding, the real electrochemical behavior of p-aminothiophenol (PATP) on Ag nanoparticles (NPs) surface was revealed for the first time. We are confident that metal-semiconductor electrochromic heterostructures could be developed into reliable substrates for EC-SERS analysis. Furthermore, the results obtained in this work provide new insights not only into the chemical mechanism of SERS, but also into the hot-electron transfer mechanism in metal-semiconductor heterostructures.