Cargando…
Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer
A side ohmic contact mode for the double channel GaN/AlGaN epitaxial layer is proposed in this paper. Rectangle transmission line model (TLM) electrodes are prepared, and the specific contact resistance is tested at the annealing temperatures from 700 °C to 850 °C. The results show that the minimum...
Autores principales: | , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9147089/ https://www.ncbi.nlm.nih.gov/pubmed/35630258 http://dx.doi.org/10.3390/mi13050791 |
_version_ | 1784716722482184192 |
---|---|
author | Meng, Qingzhi Lin, Qijing Jing, Weixuan Zhao, Na Yang, Ping Lu, Dejiang |
author_facet | Meng, Qingzhi Lin, Qijing Jing, Weixuan Zhao, Na Yang, Ping Lu, Dejiang |
author_sort | Meng, Qingzhi |
collection | PubMed |
description | A side ohmic contact mode for the double channel GaN/AlGaN epitaxial layer is proposed in this paper. Rectangle transmission line model (TLM) electrodes are prepared, and the specific contact resistance is tested at the annealing temperatures from 700 °C to 850 °C. The results show that the minimum specific contact resistance is 2.58 × 10(−7) Ω·cm(2) at the annealing temperature of 750 °C, which is three to four times lower than the surface contact mode. Scanning electron microscope (SEM), energy dispersive spectrometer (EDS), and atomic force microscope (AFM) were carried out for the analysis of the morphology, element composition, and the height fluctuation at the contact edge. With the increase in the annealing temperature, the specific contact resistance decreases due to the alloying of electrodes and the raised number of N vacancies. However, when the annealing temperature exceeds 800 °C, the state of the stress in the electrode films transforms from compressive stress to tensile stress. Besides, the volume expansion of metal electrode film and the increase in the roughness at the contact edge leads to the degradation of the side ohmic contact characteristics. |
format | Online Article Text |
id | pubmed-9147089 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-91470892022-05-29 Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer Meng, Qingzhi Lin, Qijing Jing, Weixuan Zhao, Na Yang, Ping Lu, Dejiang Micromachines (Basel) Article A side ohmic contact mode for the double channel GaN/AlGaN epitaxial layer is proposed in this paper. Rectangle transmission line model (TLM) electrodes are prepared, and the specific contact resistance is tested at the annealing temperatures from 700 °C to 850 °C. The results show that the minimum specific contact resistance is 2.58 × 10(−7) Ω·cm(2) at the annealing temperature of 750 °C, which is three to four times lower than the surface contact mode. Scanning electron microscope (SEM), energy dispersive spectrometer (EDS), and atomic force microscope (AFM) were carried out for the analysis of the morphology, element composition, and the height fluctuation at the contact edge. With the increase in the annealing temperature, the specific contact resistance decreases due to the alloying of electrodes and the raised number of N vacancies. However, when the annealing temperature exceeds 800 °C, the state of the stress in the electrode films transforms from compressive stress to tensile stress. Besides, the volume expansion of metal electrode film and the increase in the roughness at the contact edge leads to the degradation of the side ohmic contact characteristics. MDPI 2022-05-19 /pmc/articles/PMC9147089/ /pubmed/35630258 http://dx.doi.org/10.3390/mi13050791 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Meng, Qingzhi Lin, Qijing Jing, Weixuan Zhao, Na Yang, Ping Lu, Dejiang Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer |
title | Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer |
title_full | Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer |
title_fullStr | Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer |
title_full_unstemmed | Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer |
title_short | Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer |
title_sort | investigation on the effect of annealing temperature on the side ohmic contact characteristics for double channel gan/algan epitaxial layer |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9147089/ https://www.ncbi.nlm.nih.gov/pubmed/35630258 http://dx.doi.org/10.3390/mi13050791 |
work_keys_str_mv | AT mengqingzhi investigationontheeffectofannealingtemperatureonthesideohmiccontactcharacteristicsfordoublechannelganalganepitaxiallayer AT linqijing investigationontheeffectofannealingtemperatureonthesideohmiccontactcharacteristicsfordoublechannelganalganepitaxiallayer AT jingweixuan investigationontheeffectofannealingtemperatureonthesideohmiccontactcharacteristicsfordoublechannelganalganepitaxiallayer AT zhaona investigationontheeffectofannealingtemperatureonthesideohmiccontactcharacteristicsfordoublechannelganalganepitaxiallayer AT yangping investigationontheeffectofannealingtemperatureonthesideohmiccontactcharacteristicsfordoublechannelganalganepitaxiallayer AT ludejiang investigationontheeffectofannealingtemperatureonthesideohmiccontactcharacteristicsfordoublechannelganalganepitaxiallayer |