Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer

A side ohmic contact mode for the double channel GaN/AlGaN epitaxial layer is proposed in this paper. Rectangle transmission line model (TLM) electrodes are prepared, and the specific contact resistance is tested at the annealing temperatures from 700 °C to 850 °C. The results show that the minimum...

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Detalles Bibliográficos
Autores principales: Meng, Qingzhi, Lin, Qijing, Jing, Weixuan, Zhao, Na, Yang, Ping, Lu, Dejiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9147089/
https://www.ncbi.nlm.nih.gov/pubmed/35630258
http://dx.doi.org/10.3390/mi13050791

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9147089/
https://www.ncbi.nlm.nih.gov/pubmed/35630258
http://dx.doi.org/10.3390/mi13050791

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