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Brightening of a dark monolayer semiconductor via strong light-matter coupling in a cavity
Engineering the properties of quantum materials via strong light-matter coupling is a compelling research direction with a multiplicity of modern applications. Those range from modifying charge transport in organic molecules, steering particle correlation and interactions, and even controlling chemi...
Autores principales: | , , , , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9151642/ https://www.ncbi.nlm.nih.gov/pubmed/35637218 http://dx.doi.org/10.1038/s41467-022-30645-5 |
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author | Shan, Hangyong Iorsh, Ivan Han, Bo Rupprecht, Christoph Knopf, Heiko Eilenberger, Falk Esmann, Martin Yumigeta, Kentaro Watanabe, Kenji Taniguchi, Takashi Klembt, Sebastian Höfling, Sven Tongay, Sefaattin Antón-Solanas, Carlos Shelykh, Ivan A. Schneider, Christian |
author_facet | Shan, Hangyong Iorsh, Ivan Han, Bo Rupprecht, Christoph Knopf, Heiko Eilenberger, Falk Esmann, Martin Yumigeta, Kentaro Watanabe, Kenji Taniguchi, Takashi Klembt, Sebastian Höfling, Sven Tongay, Sefaattin Antón-Solanas, Carlos Shelykh, Ivan A. Schneider, Christian |
author_sort | Shan, Hangyong |
collection | PubMed |
description | Engineering the properties of quantum materials via strong light-matter coupling is a compelling research direction with a multiplicity of modern applications. Those range from modifying charge transport in organic molecules, steering particle correlation and interactions, and even controlling chemical reactions. Here, we study the modification of the material properties via strong coupling and demonstrate an effective inversion of the excitonic band-ordering in a monolayer of WSe(2) with spin-forbidden, optically dark ground state. In our experiments, we harness the strong light-matter coupling between cavity photon and the high energy, spin-allowed bright exciton, and thus creating two bright polaritonic modes in the optical bandgap with the lower polariton mode pushed below the WSe(2) dark state. We demonstrate that in this regime the commonly observed luminescence quenching stemming from the fast relaxation to the dark ground state is prevented, which results in the brightening of this intrinsically dark material. We probe this effective brightening by temperature-dependent photoluminescence, and we find an excellent agreement with a theoretical model accounting for the inversion of the band ordering and phonon-assisted polariton relaxation. |
format | Online Article Text |
id | pubmed-9151642 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-91516422022-06-01 Brightening of a dark monolayer semiconductor via strong light-matter coupling in a cavity Shan, Hangyong Iorsh, Ivan Han, Bo Rupprecht, Christoph Knopf, Heiko Eilenberger, Falk Esmann, Martin Yumigeta, Kentaro Watanabe, Kenji Taniguchi, Takashi Klembt, Sebastian Höfling, Sven Tongay, Sefaattin Antón-Solanas, Carlos Shelykh, Ivan A. Schneider, Christian Nat Commun Article Engineering the properties of quantum materials via strong light-matter coupling is a compelling research direction with a multiplicity of modern applications. Those range from modifying charge transport in organic molecules, steering particle correlation and interactions, and even controlling chemical reactions. Here, we study the modification of the material properties via strong coupling and demonstrate an effective inversion of the excitonic band-ordering in a monolayer of WSe(2) with spin-forbidden, optically dark ground state. In our experiments, we harness the strong light-matter coupling between cavity photon and the high energy, spin-allowed bright exciton, and thus creating two bright polaritonic modes in the optical bandgap with the lower polariton mode pushed below the WSe(2) dark state. We demonstrate that in this regime the commonly observed luminescence quenching stemming from the fast relaxation to the dark ground state is prevented, which results in the brightening of this intrinsically dark material. We probe this effective brightening by temperature-dependent photoluminescence, and we find an excellent agreement with a theoretical model accounting for the inversion of the band ordering and phonon-assisted polariton relaxation. Nature Publishing Group UK 2022-05-30 /pmc/articles/PMC9151642/ /pubmed/35637218 http://dx.doi.org/10.1038/s41467-022-30645-5 Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Shan, Hangyong Iorsh, Ivan Han, Bo Rupprecht, Christoph Knopf, Heiko Eilenberger, Falk Esmann, Martin Yumigeta, Kentaro Watanabe, Kenji Taniguchi, Takashi Klembt, Sebastian Höfling, Sven Tongay, Sefaattin Antón-Solanas, Carlos Shelykh, Ivan A. Schneider, Christian Brightening of a dark monolayer semiconductor via strong light-matter coupling in a cavity |
title | Brightening of a dark monolayer semiconductor via strong light-matter coupling in a cavity |
title_full | Brightening of a dark monolayer semiconductor via strong light-matter coupling in a cavity |
title_fullStr | Brightening of a dark monolayer semiconductor via strong light-matter coupling in a cavity |
title_full_unstemmed | Brightening of a dark monolayer semiconductor via strong light-matter coupling in a cavity |
title_short | Brightening of a dark monolayer semiconductor via strong light-matter coupling in a cavity |
title_sort | brightening of a dark monolayer semiconductor via strong light-matter coupling in a cavity |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9151642/ https://www.ncbi.nlm.nih.gov/pubmed/35637218 http://dx.doi.org/10.1038/s41467-022-30645-5 |
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