Highly heterogeneous epitaxy of flexoelectric BaTiO(3-δ) membrane on Ge

The integration of complex oxides with a wide spectrum of functionalities on Si, Ge and flexible substrates is highly demanded for functional devices in information technology. We demonstrate the remote epitaxy of BaTiO(3) (BTO) on Ge using a graphene intermediate layer, which forms a prototype of highly heterogeneous epitaxial systems. The Ge surface orientation dictates the outcome of remote epitaxy. Single crystalline epitaxial BTO(3-δ) films were grown on graphene/Ge (011), whereas graphene/Ge (001) led to textured films. The graphene plays an important role in surface passivation. The remote epitaxial deposition of BTO(3-δ) follows the Volmer-Weber growth mode, with the strain being partially relaxed at the very beginning of the growth. Such BTO(3-δ) films can be easily exfoliated and transferred to arbitrary substrates like Si and flexible polyimide. The transferred BTO(3-δ) films possess enhanced flexoelectric properties with a gauge factor of as high as 1127. These results not only expand the understanding of heteroepitaxy, but also open a pathway for the applications of devices based on complex oxides.