Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices

Graphene-driving strain-pre-store engineering enables the epitaxy of strain-free AlN film with low dislocation density for DUV-LED and the unique mechanism of strain-relaxation in QvdW epitaxy was demystified.

Detalles Bibliográficos
Autor principal: Nguyen, Hieu. P. T.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
News & Views
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9151680/
https://www.ncbi.nlm.nih.gov/pubmed/35637198
http://dx.doi.org/10.1038/s41377-022-00861-1
Descripción
Sumario:Graphene-driving strain-pre-store engineering enables the epitaxy of strain-free AlN film with low dislocation density for DUV-LED and the unique mechanism of strain-relaxation in QvdW epitaxy was demystified.

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