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Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices
Graphene-driving strain-pre-store engineering enables the epitaxy of strain-free AlN film with low dislocation density for DUV-LED and the unique mechanism of strain-relaxation in QvdW epitaxy was demystified.
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2022
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9151680/ https://www.ncbi.nlm.nih.gov/pubmed/35637198 http://dx.doi.org/10.1038/s41377-022-00861-1 |
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| author | Nguyen, Hieu. P. T. |
| author_facet | Nguyen, Hieu. P. T. |
| author_sort | Nguyen, Hieu. P. T. |
| collection | PubMed |
| description | Graphene-driving strain-pre-store engineering enables the epitaxy of strain-free AlN film with low dislocation density for DUV-LED and the unique mechanism of strain-relaxation in QvdW epitaxy was demystified. |
| format | Online Article Text |
| id | pubmed-9151680 |
| institution | National Center for Biotechnology Information |
| language | English |
| publishDate | 2022 |
| publisher | Nature Publishing Group UK |
| record_format | MEDLINE/PubMed |
| spelling | pubmed-91516802022-06-01 Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices Nguyen, Hieu. P. T. Light Sci Appl News & Views Graphene-driving strain-pre-store engineering enables the epitaxy of strain-free AlN film with low dislocation density for DUV-LED and the unique mechanism of strain-relaxation in QvdW epitaxy was demystified. Nature Publishing Group UK 2022-05-30 /pmc/articles/PMC9151680/ /pubmed/35637198 http://dx.doi.org/10.1038/s41377-022-00861-1 Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
| spellingShingle | News & Views Nguyen, Hieu. P. T. Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices |
| title | Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices |
| title_full | Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices |
| title_fullStr | Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices |
| title_full_unstemmed | Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices |
| title_short | Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices |
| title_sort | graphene-driving novel strain relaxation towards aln film and duv photoelectronic devices |
| topic | News & Views |
| url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9151680/ https://www.ncbi.nlm.nih.gov/pubmed/35637198 http://dx.doi.org/10.1038/s41377-022-00861-1 |
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