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Graphene-driving novel strain relaxation towards AlN film and DUV photoelectronic devices
Graphene-driving strain-pre-store engineering enables the epitaxy of strain-free AlN film with low dislocation density for DUV-LED and the unique mechanism of strain-relaxation in QvdW epitaxy was demystified.
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2022
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9151680/ https://www.ncbi.nlm.nih.gov/pubmed/35637198 http://dx.doi.org/10.1038/s41377-022-00861-1 |