“Clean” doping to advance 2D material phototransistors

Doping is an essential element to develop next-generation electronic and optoelectronic devices and has to break the limit of specific steps during material synthesis and device fabrication. Here the authors reveal “clean” doping to enhance the electric and photoelectric performance of two-dimension...

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Detalles Bibliográficos
Autores principales: Wang, Zhen, Wang, Peng, Hu, Weida
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
News & Views
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9167814/
https://www.ncbi.nlm.nih.gov/pubmed/35662234
http://dx.doi.org/10.1038/s41377-022-00842-4
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author Wang, Zhen
Wang, Peng
Hu, Weida
author_facet Wang, Zhen
Wang, Peng
Hu, Weida
author_sort Wang, Zhen
collection PubMed
description Doping is an essential element to develop next-generation electronic and optoelectronic devices and has to break the limit of specific steps during material synthesis and device fabrication. Here the authors reveal “clean” doping to enhance the electric and photoelectric performance of two-dimensional (2D) indium selenide (InSe) via a neutron-transmutation method for the first time, even after device fabrication.
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spelling pubmed-91678142022-06-07 “Clean” doping to advance 2D material phototransistors Wang, Zhen Wang, Peng Hu, Weida Light Sci Appl News & Views Doping is an essential element to develop next-generation electronic and optoelectronic devices and has to break the limit of specific steps during material synthesis and device fabrication. Here the authors reveal “clean” doping to enhance the electric and photoelectric performance of two-dimensional (2D) indium selenide (InSe) via a neutron-transmutation method for the first time, even after device fabrication. Nature Publishing Group UK 2022-06-06 /pmc/articles/PMC9167814/ /pubmed/35662234 http://dx.doi.org/10.1038/s41377-022-00842-4 Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle News & Views
Wang, Zhen
Wang, Peng
Hu, Weida
“Clean” doping to advance 2D material phototransistors
title “Clean” doping to advance 2D material phototransistors
title_full “Clean” doping to advance 2D material phototransistors
title_fullStr “Clean” doping to advance 2D material phototransistors
title_full_unstemmed “Clean” doping to advance 2D material phototransistors
title_short “Clean” doping to advance 2D material phototransistors
title_sort “clean” doping to advance 2d material phototransistors
topic News & Views
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9167814/
https://www.ncbi.nlm.nih.gov/pubmed/35662234
http://dx.doi.org/10.1038/s41377-022-00842-4
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AT wangpeng cleandopingtoadvance2dmaterialphototransistors
AT huweida cleandopingtoadvance2dmaterialphototransistors

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