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Multilevel polarization switching in ferroelectric thin films
Ferroic order is characterized by hystereses with two remanent states and therefore inherently binary. The increasing interest in materials showing non-discrete responses, however, calls for a paradigm shift towards continuously tunable remanent ferroic states. Device integration for oxide nanoelect...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9174202/ https://www.ncbi.nlm.nih.gov/pubmed/35672404 http://dx.doi.org/10.1038/s41467-022-30823-5 |
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author | Sarott, Martin F. Rossell, Marta D. Fiebig, Manfred Trassin, Morgan |
author_facet | Sarott, Martin F. Rossell, Marta D. Fiebig, Manfred Trassin, Morgan |
author_sort | Sarott, Martin F. |
collection | PubMed |
description | Ferroic order is characterized by hystereses with two remanent states and therefore inherently binary. The increasing interest in materials showing non-discrete responses, however, calls for a paradigm shift towards continuously tunable remanent ferroic states. Device integration for oxide nanoelectronics furthermore requires this tunability at the nanoscale. Here we demonstrate that we can arbitrarily set the remanent ferroelectric polarization at nanometric dimensions. We accomplish this in ultrathin epitaxial PbZr(0.52)Ti(0.48)O(3) films featuring a dense pattern of decoupled nanometric 180° domains with a broad coercive-field distribution. This multilevel switching is achieved by driving the system towards the instability at the morphotropic phase boundary. The phase competition near this boundary in combination with epitaxial strain increases the responsiveness to external stimuli and unlocks new degrees of freedom to nano-control the polarization. We highlight the technological benefits of non-binary switching by demonstrating a quasi-continuous tunability of the non-linear optical response and of tunnel electroresistance. |
format | Online Article Text |
id | pubmed-9174202 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-91742022022-06-09 Multilevel polarization switching in ferroelectric thin films Sarott, Martin F. Rossell, Marta D. Fiebig, Manfred Trassin, Morgan Nat Commun Article Ferroic order is characterized by hystereses with two remanent states and therefore inherently binary. The increasing interest in materials showing non-discrete responses, however, calls for a paradigm shift towards continuously tunable remanent ferroic states. Device integration for oxide nanoelectronics furthermore requires this tunability at the nanoscale. Here we demonstrate that we can arbitrarily set the remanent ferroelectric polarization at nanometric dimensions. We accomplish this in ultrathin epitaxial PbZr(0.52)Ti(0.48)O(3) films featuring a dense pattern of decoupled nanometric 180° domains with a broad coercive-field distribution. This multilevel switching is achieved by driving the system towards the instability at the morphotropic phase boundary. The phase competition near this boundary in combination with epitaxial strain increases the responsiveness to external stimuli and unlocks new degrees of freedom to nano-control the polarization. We highlight the technological benefits of non-binary switching by demonstrating a quasi-continuous tunability of the non-linear optical response and of tunnel electroresistance. Nature Publishing Group UK 2022-06-07 /pmc/articles/PMC9174202/ /pubmed/35672404 http://dx.doi.org/10.1038/s41467-022-30823-5 Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Sarott, Martin F. Rossell, Marta D. Fiebig, Manfred Trassin, Morgan Multilevel polarization switching in ferroelectric thin films |
title | Multilevel polarization switching in ferroelectric thin films |
title_full | Multilevel polarization switching in ferroelectric thin films |
title_fullStr | Multilevel polarization switching in ferroelectric thin films |
title_full_unstemmed | Multilevel polarization switching in ferroelectric thin films |
title_short | Multilevel polarization switching in ferroelectric thin films |
title_sort | multilevel polarization switching in ferroelectric thin films |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9174202/ https://www.ncbi.nlm.nih.gov/pubmed/35672404 http://dx.doi.org/10.1038/s41467-022-30823-5 |
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