Surface Kinetic Mechanisms of Epitaxial Chemical Vapour Deposition of 4H Silicon Carbide Growth by Methyltrichlorosilane-H(2) Gaseous System

The chemical vapour deposition (CVD) technique could be used to fabricate a silicon carbide (SiC) epitaxial layer. Methyltrichlorosilane (CH(3)SiCl(3), MTS) is widely used as a precursor for CVD of SiC with a wide range of allowable deposition temperatures. Typically, an appropriate model for the CVD process involves kinetic mechanisms of both gas-phase reactions and surface reactions. Here, we proposed the surface kinetic mechanisms of epitaxial SiC growth for MTS-H(2) gaseous system where the MTS employed as the single precursor diluted in H(2). The deposition face is assumed to be the Si face with a surface site terminated by an open site or H atom. The kinetic mechanisms for surface reactions proposed in this work for MTS-H(2) gaseous system of epitaxial growth of SiC by CVD technique from mechanisms proposed for H-Si-C-Cl system are discussed in detail. Predicted components of surface species and growth rates at different mechanisms are discussed in detail.