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Surface Kinetic Mechanisms of Epitaxial Chemical Vapour Deposition of 4H Silicon Carbide Growth by Methyltrichlorosilane-H(2) Gaseous System
The chemical vapour deposition (CVD) technique could be used to fabricate a silicon carbide (SiC) epitaxial layer. Methyltrichlorosilane (CH(3)SiCl(3), MTS) is widely used as a precursor for CVD of SiC with a wide range of allowable deposition temperatures. Typically, an appropriate model for the CV...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9181713/ https://www.ncbi.nlm.nih.gov/pubmed/35683066 http://dx.doi.org/10.3390/ma15113768 |