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An Efficient Dopant for Introducing Magnetism into Topological Insulator Bi(2)Se(3)

In this work, we obtained an effective way to introduce magnetism into topological insulators, and successfully fabricated single crystal C-Bi(2)Se(3). The structural, electrical and magnetic properties of non-magnetic element X (B, C and N) doped at Bi, Se1, Se2 and VDW gap sites of Bi(2)Se(3) were...

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Detalles Bibliográficos
Autores principales: Wang, Dan, Hu, Cui-E, Liu, Li-Gang, Zhang, Min, Chen, Xiang-Rong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9181840/
https://www.ncbi.nlm.nih.gov/pubmed/35683164
http://dx.doi.org/10.3390/ma15113864
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author Wang, Dan
Hu, Cui-E
Liu, Li-Gang
Zhang, Min
Chen, Xiang-Rong
author_facet Wang, Dan
Hu, Cui-E
Liu, Li-Gang
Zhang, Min
Chen, Xiang-Rong
author_sort Wang, Dan
collection PubMed
description In this work, we obtained an effective way to introduce magnetism into topological insulators, and successfully fabricated single crystal C-Bi(2)Se(3). The structural, electrical and magnetic properties of non-magnetic element X (B, C and N) doped at Bi, Se1, Se2 and VDW gap sites of Bi(2)Se(3) were studied by the first principles. It is shown that the impurity bands formed inside the bulk inverted energy gap near the Fermi level with C doping Bi(2)Se(3). Due to spin-polarized ferromagnetic coupling, the time inversion symmetry of Bi(2)Se(3) is destroyed. Remarkably, C is the most effective dopant because of the magnetic moment produced by doping at all positions. The experiment confirmed that the remnant ferromagnetism Mr is related to the C concentration. Theoretical calculations and experiments confirmed that carbon-doped Bi(2)Se(3) is ferromagnetic, which provides a plan for manipulating topological properties and exploring spintronic applications.
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spelling pubmed-91818402022-06-10 An Efficient Dopant for Introducing Magnetism into Topological Insulator Bi(2)Se(3) Wang, Dan Hu, Cui-E Liu, Li-Gang Zhang, Min Chen, Xiang-Rong Materials (Basel) Article In this work, we obtained an effective way to introduce magnetism into topological insulators, and successfully fabricated single crystal C-Bi(2)Se(3). The structural, electrical and magnetic properties of non-magnetic element X (B, C and N) doped at Bi, Se1, Se2 and VDW gap sites of Bi(2)Se(3) were studied by the first principles. It is shown that the impurity bands formed inside the bulk inverted energy gap near the Fermi level with C doping Bi(2)Se(3). Due to spin-polarized ferromagnetic coupling, the time inversion symmetry of Bi(2)Se(3) is destroyed. Remarkably, C is the most effective dopant because of the magnetic moment produced by doping at all positions. The experiment confirmed that the remnant ferromagnetism Mr is related to the C concentration. Theoretical calculations and experiments confirmed that carbon-doped Bi(2)Se(3) is ferromagnetic, which provides a plan for manipulating topological properties and exploring spintronic applications. MDPI 2022-05-28 /pmc/articles/PMC9181840/ /pubmed/35683164 http://dx.doi.org/10.3390/ma15113864 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Wang, Dan
Hu, Cui-E
Liu, Li-Gang
Zhang, Min
Chen, Xiang-Rong
An Efficient Dopant for Introducing Magnetism into Topological Insulator Bi(2)Se(3)
title An Efficient Dopant for Introducing Magnetism into Topological Insulator Bi(2)Se(3)
title_full An Efficient Dopant for Introducing Magnetism into Topological Insulator Bi(2)Se(3)
title_fullStr An Efficient Dopant for Introducing Magnetism into Topological Insulator Bi(2)Se(3)
title_full_unstemmed An Efficient Dopant for Introducing Magnetism into Topological Insulator Bi(2)Se(3)
title_short An Efficient Dopant for Introducing Magnetism into Topological Insulator Bi(2)Se(3)
title_sort efficient dopant for introducing magnetism into topological insulator bi(2)se(3)
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9181840/
https://www.ncbi.nlm.nih.gov/pubmed/35683164
http://dx.doi.org/10.3390/ma15113864
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