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An Efficient Dopant for Introducing Magnetism into Topological Insulator Bi(2)Se(3)

In this work, we obtained an effective way to introduce magnetism into topological insulators, and successfully fabricated single crystal C-Bi(2)Se(3). The structural, electrical and magnetic properties of non-magnetic element X (B, C and N) doped at Bi, Se1, Se2 and VDW gap sites of Bi(2)Se(3) were...

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Detalles Bibliográficos
Autores principales:	Wang, Dan, Hu, Cui-E, Liu, Li-Gang, Zhang, Min, Chen, Xiang-Rong
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9181840/ https://www.ncbi.nlm.nih.gov/pubmed/35683164 http://dx.doi.org/10.3390/ma15113864

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