Tunable Switching Behavior of GO-Based Memristors Using Thermal Reduction

This work reports on the fabrication of a novel planar reduced graphene oxide (rGO) memristor (MR) device. For the first time in the literature, the MR tunable resistive switching behavior is controlled by the GO reduction time at a constant temperature. The device is fabricated using standard micro...

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Detalles Bibliográficos
Autores principales: Abujabal, Muayad, Abunahla, Heba, Mohammad, Baker, Alazzam, Anas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9182041/
https://www.ncbi.nlm.nih.gov/pubmed/35683668
http://dx.doi.org/10.3390/nano12111812

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9182041/
https://www.ncbi.nlm.nih.gov/pubmed/35683668
http://dx.doi.org/10.3390/nano12111812

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