GaN/AlN Multi-Quantum Wells Infrared Detector with Short-Wave Infrared Response at Room Temperature

GaN-based quantum well infrared detectors can make up for the weakness of GaAs-based quantum well infrared detectors for short-wave infrared detection. In this work, GaN/AlN (1.8 nm/1.8 nm) multi-quantum wells have been epitaxially grown on sapphire substrate using MBE technology. Meanwhile, based o...

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Detalles Bibliográficos
Autores principales: Jiang, Fengqiu, Bu, Yuyu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9185584/
https://www.ncbi.nlm.nih.gov/pubmed/35684859
http://dx.doi.org/10.3390/s22114239

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9185584/
https://www.ncbi.nlm.nih.gov/pubmed/35684859
http://dx.doi.org/10.3390/s22114239

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