Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System

Controlled conductive filament formation in the resistive random access memory device is an essential requirement for analog resistive switching to develop artificial synapses. In this work, we have studied Au/Ti/HfAlO(x)/TiN-NP/HfAlO(x)/ITO RRAM device to demonstrate conductance quantization behavi...

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Detalles Bibliográficos
Autores principales: Mahata, Chandreswar, Ismail, Muhammad, Kang, Myounggon, Kim, Sungjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2022
Materias:
Research
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9187820/
https://www.ncbi.nlm.nih.gov/pubmed/35687194
http://dx.doi.org/10.1186/s11671-022-03696-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9187820/
https://www.ncbi.nlm.nih.gov/pubmed/35687194
http://dx.doi.org/10.1186/s11671-022-03696-2

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