Domain Engineering in Bulk Ferroelectric Ceramics via Mesoscopic Chemical Inhomogeneity

Domain engineering in ferroelectrics endows flexibility for different functional applications. Whereas the domain engineering strategy for single crystals and thin films is diverse, there is only a limited number of strategies for bulk ceramics. Here, a domain engineering strategy for achieving a compact domain architecture with increased domain‐wall density in (K,Na)NbO(3) (KNN)‐based ferroelectric ceramics via mesoscopic chemical inhomogeneity (MCI) is developed. The MCI‐induced interfaces can effectively hinder domain continuity and modify the domain configuration. Besides, the MCI effect also results in diffused phase transitions, which is beneficial for achieving enhanced thermal stability. Modulation of chemical inhomogeneity demonstrates great potential for engineering desirable domain configuration and properties in ferroelectric ceramics. Additionally, the MCI can be easily controlled by regulating the processing condition during solid‐state synthesis, which is advantageous to industrial production.