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Light Modulation in Silicon Photonics by PZT Actuated Acoustic Waves

[Image: see text] Tailoring the interaction between light and sound has opened new possibilities in photonic integrated circuits (PICs) that range from achieving quantum control of light to high-speed information processing. However, the actuation of sound waves in Si PICs usually requires integrati...

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Autores principales: Ansari, Irfan, George, John P., Feutmba, Gilles F., Van de Veire, Tessa, Pandey, Awanish, Beeckman, Jeroen, Van Thourhout, Dries
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9205428/
https://www.ncbi.nlm.nih.gov/pubmed/35726237
http://dx.doi.org/10.1021/acsphotonics.1c01857
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author Ansari, Irfan
George, John P.
Feutmba, Gilles F.
Van de Veire, Tessa
Pandey, Awanish
Beeckman, Jeroen
Van Thourhout, Dries
author_facet Ansari, Irfan
George, John P.
Feutmba, Gilles F.
Van de Veire, Tessa
Pandey, Awanish
Beeckman, Jeroen
Van Thourhout, Dries
author_sort Ansari, Irfan
collection PubMed
description [Image: see text] Tailoring the interaction between light and sound has opened new possibilities in photonic integrated circuits (PICs) that range from achieving quantum control of light to high-speed information processing. However, the actuation of sound waves in Si PICs usually requires integration of a piezoelectric thin film. Lead zirconate titanate (PZT) is a promising material due to its strong piezoelectric and electromechanical coupling coefficient. Unfortunately, the traditional methods to grow PZT on silicon are detrimental for photonic applications due to the presence of an optical lossy intermediate layer. In this work, we report integration of a high quality PZT thin film on a silicon-on-insulator (SOI) photonic chip using an optically transparent buffer layer. We demonstrate acousto-optic modulation in silicon waveguides with the PZT actuated acoustic waves. We fabricate interdigital transducers (IDTs) on the PZT film with a contact photolithography and electron-beam lithography to generate the acoustic waves in MHz and GHz ranges, respectively. We obtain a V(π)L ∼ 3.35 V·cm at 576 MHz from a 350 nm thick gold (Au) IDT with 20 finger-pairs. After taking the effect of mass-loading and grating reflection into account, we measured a V(π)L ∼ 3.60 V·cm at 2 GHz from a 100 nm thick aluminum (Al) IDT consisting of only four finger-pairs. Thus, without patterning the PZT film nor suspending the device, we obtained figures-of-merit comparable to state-of-the-art modulators based on SOI, making it a promising candidate for a broadband and efficient acousto-optic modulator for future integration.
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spelling pubmed-92054282023-05-20 Light Modulation in Silicon Photonics by PZT Actuated Acoustic Waves Ansari, Irfan George, John P. Feutmba, Gilles F. Van de Veire, Tessa Pandey, Awanish Beeckman, Jeroen Van Thourhout, Dries ACS Photonics [Image: see text] Tailoring the interaction between light and sound has opened new possibilities in photonic integrated circuits (PICs) that range from achieving quantum control of light to high-speed information processing. However, the actuation of sound waves in Si PICs usually requires integration of a piezoelectric thin film. Lead zirconate titanate (PZT) is a promising material due to its strong piezoelectric and electromechanical coupling coefficient. Unfortunately, the traditional methods to grow PZT on silicon are detrimental for photonic applications due to the presence of an optical lossy intermediate layer. In this work, we report integration of a high quality PZT thin film on a silicon-on-insulator (SOI) photonic chip using an optically transparent buffer layer. We demonstrate acousto-optic modulation in silicon waveguides with the PZT actuated acoustic waves. We fabricate interdigital transducers (IDTs) on the PZT film with a contact photolithography and electron-beam lithography to generate the acoustic waves in MHz and GHz ranges, respectively. We obtain a V(π)L ∼ 3.35 V·cm at 576 MHz from a 350 nm thick gold (Au) IDT with 20 finger-pairs. After taking the effect of mass-loading and grating reflection into account, we measured a V(π)L ∼ 3.60 V·cm at 2 GHz from a 100 nm thick aluminum (Al) IDT consisting of only four finger-pairs. Thus, without patterning the PZT film nor suspending the device, we obtained figures-of-merit comparable to state-of-the-art modulators based on SOI, making it a promising candidate for a broadband and efficient acousto-optic modulator for future integration. American Chemical Society 2022-05-20 2022-06-15 /pmc/articles/PMC9205428/ /pubmed/35726237 http://dx.doi.org/10.1021/acsphotonics.1c01857 Text en © 2022 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by-nc-nd/4.0/Permits non-commercial access and re-use, provided that author attribution and integrity are maintained; but does not permit creation of adaptations or other derivative works (https://creativecommons.org/licenses/by-nc-nd/4.0/).
spellingShingle Ansari, Irfan
George, John P.
Feutmba, Gilles F.
Van de Veire, Tessa
Pandey, Awanish
Beeckman, Jeroen
Van Thourhout, Dries
Light Modulation in Silicon Photonics by PZT Actuated Acoustic Waves
title Light Modulation in Silicon Photonics by PZT Actuated Acoustic Waves
title_full Light Modulation in Silicon Photonics by PZT Actuated Acoustic Waves
title_fullStr Light Modulation in Silicon Photonics by PZT Actuated Acoustic Waves
title_full_unstemmed Light Modulation in Silicon Photonics by PZT Actuated Acoustic Waves
title_short Light Modulation in Silicon Photonics by PZT Actuated Acoustic Waves
title_sort light modulation in silicon photonics by pzt actuated acoustic waves
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9205428/
https://www.ncbi.nlm.nih.gov/pubmed/35726237
http://dx.doi.org/10.1021/acsphotonics.1c01857
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