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Picosecond optospintronic tunnel junctions
Perpendicular magnetic tunnel junctions (p-MTJs), as building blocks of spintronic devices, offer substantial potential for next-generation nonvolatile memory applications. However, their performance is fundamentally hindered by a subnanosecond speed limitation, due to spin-polarized-current-based m...
| Autores principales: | , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
National Academy of Sciences
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9214493/ http://dx.doi.org/10.1073/pnas.2204732119 |