Tabletop Fabrication of High-Performance MoS(2) Field-Effect Transistors

[Image: see text] A simple way to prepare field-effect transistors (FETs) using MoS(2) on tabletop is presented. Conductive silver paste was applied onto chemical vapor deposition (CVD)-grown MoS(2) as Ohmic-contact electrodes. Heating the device in vacuum further enhances the performance without da...

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Detalles Bibliográficos
Autores principales: Cho, Ungrae, Kim, Seokjin, Shin, Chang Yeop, Song, Intek
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9219050/
https://www.ncbi.nlm.nih.gov/pubmed/35755343
http://dx.doi.org/10.1021/acsomega.2c02188
Descripción
Sumario:[Image: see text] A simple way to prepare field-effect transistors (FETs) using MoS(2) on tabletop is presented. Conductive silver paste was applied onto chemical vapor deposition (CVD)-grown MoS(2) as Ohmic-contact electrodes. Heating the device in vacuum further enhances the performance without damage. The final performance is comparable to that of the SiO(2)-backgated devices prepared by lithography and metal evaporators. The role of the silver paste and heat treatment in vacuum is investigated by device and spectroscopic analysis.

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