Tabletop Fabrication of High-Performance MoS(2) Field-Effect Transistors

[Image: see text] A simple way to prepare field-effect transistors (FETs) using MoS(2) on tabletop is presented. Conductive silver paste was applied onto chemical vapor deposition (CVD)-grown MoS(2) as Ohmic-contact electrodes. Heating the device in vacuum further enhances the performance without da...

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Autores principales: Cho, Ungrae, Kim, Seokjin, Shin, Chang Yeop, Song, Intek
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9219050/
https://www.ncbi.nlm.nih.gov/pubmed/35755343
http://dx.doi.org/10.1021/acsomega.2c02188
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author Cho, Ungrae
Kim, Seokjin
Shin, Chang Yeop
Song, Intek
author_facet Cho, Ungrae
Kim, Seokjin
Shin, Chang Yeop
Song, Intek
author_sort Cho, Ungrae
collection PubMed
description [Image: see text] A simple way to prepare field-effect transistors (FETs) using MoS(2) on tabletop is presented. Conductive silver paste was applied onto chemical vapor deposition (CVD)-grown MoS(2) as Ohmic-contact electrodes. Heating the device in vacuum further enhances the performance without damage. The final performance is comparable to that of the SiO(2)-backgated devices prepared by lithography and metal evaporators. The role of the silver paste and heat treatment in vacuum is investigated by device and spectroscopic analysis.
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spelling pubmed-92190502022-06-24 Tabletop Fabrication of High-Performance MoS(2) Field-Effect Transistors Cho, Ungrae Kim, Seokjin Shin, Chang Yeop Song, Intek ACS Omega [Image: see text] A simple way to prepare field-effect transistors (FETs) using MoS(2) on tabletop is presented. Conductive silver paste was applied onto chemical vapor deposition (CVD)-grown MoS(2) as Ohmic-contact electrodes. Heating the device in vacuum further enhances the performance without damage. The final performance is comparable to that of the SiO(2)-backgated devices prepared by lithography and metal evaporators. The role of the silver paste and heat treatment in vacuum is investigated by device and spectroscopic analysis. American Chemical Society 2022-06-10 /pmc/articles/PMC9219050/ /pubmed/35755343 http://dx.doi.org/10.1021/acsomega.2c02188 Text en © 2022 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by-nc-nd/4.0/Permits non-commercial access and re-use, provided that author attribution and integrity are maintained; but does not permit creation of adaptations or other derivative works (https://creativecommons.org/licenses/by-nc-nd/4.0/).
spellingShingle Cho, Ungrae
Kim, Seokjin
Shin, Chang Yeop
Song, Intek
Tabletop Fabrication of High-Performance MoS(2) Field-Effect Transistors
title Tabletop Fabrication of High-Performance MoS(2) Field-Effect Transistors
title_full Tabletop Fabrication of High-Performance MoS(2) Field-Effect Transistors
title_fullStr Tabletop Fabrication of High-Performance MoS(2) Field-Effect Transistors
title_full_unstemmed Tabletop Fabrication of High-Performance MoS(2) Field-Effect Transistors
title_short Tabletop Fabrication of High-Performance MoS(2) Field-Effect Transistors
title_sort tabletop fabrication of high-performance mos(2) field-effect transistors
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9219050/
https://www.ncbi.nlm.nih.gov/pubmed/35755343
http://dx.doi.org/10.1021/acsomega.2c02188
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