Reduction in RF Loss Based on AlGaN Back-Barrier Structure Changes

We designed a high electron mobility transistor (HEMT) epitaxial structure based on an AlGaN/GaN heterojunction, utilizing Silvaco TCAD, and selected AlGaN with an aluminum composition of 0.1 as the back-barrier of the AlGaN/GaN heterojunction. We enhanced the confinement of the two-dimensional elec...

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Detalles Bibliográficos
Autores principales: Fang, Yi, Chen, Ling, Liu, Yuqi, Wang, Hong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9227317/
https://www.ncbi.nlm.nih.gov/pubmed/35744445
http://dx.doi.org/10.3390/mi13060830

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9227317/
https://www.ncbi.nlm.nih.gov/pubmed/35744445
http://dx.doi.org/10.3390/mi13060830

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