Cargando…

Design of the Threshold-Controllable Memristor Emulator Based on NDR Characteristics

Due to the high manufacturing cost of memristors, an equivalent emulator has been employed as one of the mainstream approaches of memristor research. A threshold-type memristor emulator based on negative differential resistance (NDR) characteristics is proposed, with the core part being the R-HBT ne...

Descripción completa

Detalles Bibliográficos
Autores principales: Lin, Mi, Luo, Wenyao, Li, Luping, Han, Qi, Lyu, Weifeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9227755/
https://www.ncbi.nlm.nih.gov/pubmed/35744443
http://dx.doi.org/10.3390/mi13060829
_version_ 1784734258637570048
author Lin, Mi
Luo, Wenyao
Li, Luping
Han, Qi
Lyu, Weifeng
author_facet Lin, Mi
Luo, Wenyao
Li, Luping
Han, Qi
Lyu, Weifeng
author_sort Lin, Mi
collection PubMed
description Due to the high manufacturing cost of memristors, an equivalent emulator has been employed as one of the mainstream approaches of memristor research. A threshold-type memristor emulator based on negative differential resistance (NDR) characteristics is proposed, with the core part being the R-HBT network composed of transistors. The advantage of the NDR-based memristor emulator is the controllable threshold, where the state of the memristor can be changed by setting the control voltage, which makes the memristor circuit design more flexible. The operation frequency of the memristor emulator is about 250 kHz. The experimental results prove the feasibility and correctness of the threshold-controllable memristor emulator circuit.
format Online
Article
Text
id pubmed-9227755
institution National Center for Biotechnology Information
language English
publishDate 2022
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-92277552022-06-25 Design of the Threshold-Controllable Memristor Emulator Based on NDR Characteristics Lin, Mi Luo, Wenyao Li, Luping Han, Qi Lyu, Weifeng Micromachines (Basel) Article Due to the high manufacturing cost of memristors, an equivalent emulator has been employed as one of the mainstream approaches of memristor research. A threshold-type memristor emulator based on negative differential resistance (NDR) characteristics is proposed, with the core part being the R-HBT network composed of transistors. The advantage of the NDR-based memristor emulator is the controllable threshold, where the state of the memristor can be changed by setting the control voltage, which makes the memristor circuit design more flexible. The operation frequency of the memristor emulator is about 250 kHz. The experimental results prove the feasibility and correctness of the threshold-controllable memristor emulator circuit. MDPI 2022-05-26 /pmc/articles/PMC9227755/ /pubmed/35744443 http://dx.doi.org/10.3390/mi13060829 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Lin, Mi
Luo, Wenyao
Li, Luping
Han, Qi
Lyu, Weifeng
Design of the Threshold-Controllable Memristor Emulator Based on NDR Characteristics
title Design of the Threshold-Controllable Memristor Emulator Based on NDR Characteristics
title_full Design of the Threshold-Controllable Memristor Emulator Based on NDR Characteristics
title_fullStr Design of the Threshold-Controllable Memristor Emulator Based on NDR Characteristics
title_full_unstemmed Design of the Threshold-Controllable Memristor Emulator Based on NDR Characteristics
title_short Design of the Threshold-Controllable Memristor Emulator Based on NDR Characteristics
title_sort design of the threshold-controllable memristor emulator based on ndr characteristics
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9227755/
https://www.ncbi.nlm.nih.gov/pubmed/35744443
http://dx.doi.org/10.3390/mi13060829
work_keys_str_mv AT linmi designofthethresholdcontrollablememristoremulatorbasedonndrcharacteristics
AT luowenyao designofthethresholdcontrollablememristoremulatorbasedonndrcharacteristics
AT liluping designofthethresholdcontrollablememristoremulatorbasedonndrcharacteristics
AT hanqi designofthethresholdcontrollablememristoremulatorbasedonndrcharacteristics
AT lyuweifeng designofthethresholdcontrollablememristoremulatorbasedonndrcharacteristics