Ab Initio Study of Graphene/hBN Van der Waals Heterostructures: Effect of Electric Field, Twist Angles and p-n Doping on the Electronic Properties

In this work, we study the structural and electronic properties of boron nitride bilayers sandwiched between graphene sheets. Different stacking, twist angles, doping, as well as an applied external gate voltage, are reported to induce important changes in the electronic band structure near the Ferm...

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Detalles Bibliográficos
Autores principales: Brozzesi, Simone, Attaccalite, Claudio, Buonocore, Francesco, Giorgi, Giacomo, Palummo, Maurizia, Pulci, Olivia
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9228424/
https://www.ncbi.nlm.nih.gov/pubmed/35745456
http://dx.doi.org/10.3390/nano12122118

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