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Gallium Oxide Nanostructures: A Review of Synthesis, Properties and Applications
Gallium oxide, as an emerging semiconductor, has attracted a lot of attention among researchers due to its high band gap (4.8 eV) and a high critical field with the value of 8 MV/cm. This paper presents a review on different chemical and physical techniques for synthesis of nanostructured β-gallium...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9229744/ https://www.ncbi.nlm.nih.gov/pubmed/35745408 http://dx.doi.org/10.3390/nano12122061 |