Stable Resistive Switching in ZnO/PVA:MoS(2) Bilayer Memristor

Reliability of nonvolatile resistive switching devices is the key point for practical applications of next-generation nonvolatile memories. Nowadays, nanostructured organic/inorganic heterojunction composites have gained wide attention due to their application potential in terms of large scalability...

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Detalles Bibliográficos
Autores principales: Sun, Tangyou, Shi, Hui, Gao, Shuai, Zhou, Zhiping, Yu, Zhiqiang, Guo, Wenjing, Li, Haiou, Zhang, Fabi, Xu, Zhimou, Zhang, Xiaowen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9230909/
https://www.ncbi.nlm.nih.gov/pubmed/35745316
http://dx.doi.org/10.3390/nano12121977

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9230909/
https://www.ncbi.nlm.nih.gov/pubmed/35745316
http://dx.doi.org/10.3390/nano12121977

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