Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering

For neuromorphic computing and high-density data storage memory, memristive devices have recently gained a lot of interest. So far, memristive devices have suffered from switching parameter instability, such as distortions in resistance values of low- and high-resistance states (LRSs and HRSs), disp...

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Detalles Bibliográficos
Autores principales: Ismail, Muhammad, Mahata, Chandreswar, Kang, Myounggon, Kim, Sungjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2022
Materias:
Research
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9232664/
https://www.ncbi.nlm.nih.gov/pubmed/35749003
http://dx.doi.org/10.1186/s11671-022-03699-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9232664/
https://www.ncbi.nlm.nih.gov/pubmed/35749003
http://dx.doi.org/10.1186/s11671-022-03699-z

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