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Robust Resistive Switching Constancy and Quantum Conductance in High-k Dielectric-Based Memristor for Neuromorphic Engineering
For neuromorphic computing and high-density data storage memory, memristive devices have recently gained a lot of interest. So far, memristive devices have suffered from switching parameter instability, such as distortions in resistance values of low- and high-resistance states (LRSs and HRSs), disp...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9232664/ https://www.ncbi.nlm.nih.gov/pubmed/35749003 http://dx.doi.org/10.1186/s11671-022-03699-z |