Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning

Electronic devices based on two-dimensional semiconductors suffer from limited electrical stability because charge carriers originating from the semiconductors interact with defects in the surrounding insulators. In field-effect transistors, the resulting trapped charges can lead to large hysteresis...

Descripción completa

Detalles Bibliográficos
Autores principales: Knobloch, Theresia, Uzlu, Burkay, Illarionov, Yury Yu., Wang, Zhenxing, Otto, Martin, Filipovic, Lado, Waltl, Michael, Neumaier, Daniel, Lemme, Max C., Grasser, Tibor
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9236902/
https://www.ncbi.nlm.nih.gov/pubmed/35783488
http://dx.doi.org/10.1038/s41928-022-00768-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9236902/
https://www.ncbi.nlm.nih.gov/pubmed/35783488
http://dx.doi.org/10.1038/s41928-022-00768-0

Ejemplares similares