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Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning
Electronic devices based on two-dimensional semiconductors suffer from limited electrical stability because charge carriers originating from the semiconductors interact with defects in the surrounding insulators. In field-effect transistors, the resulting trapped charges can lead to large hysteresis...
| Autores principales: | , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9236902/ https://www.ncbi.nlm.nih.gov/pubmed/35783488 http://dx.doi.org/10.1038/s41928-022-00768-0 |