Control of Morphology and Substrate Etching in InAs/InP Droplet Epitaxy Quantum Dots for Single and Entangled Photon Emitters

[Image: see text] We present a detailed atomic-resolution study of morphology and substrate etching mechanism in InAs/InP droplet epitaxy quantum dots (QDs) grown by metal–organic vapor phase epitaxy via cross-sectional scanning tunneling microscopy (X-STM). Two different etching processes are obser...

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Detalles Bibliográficos
Autores principales: Gajjela, Raja Sekhar Reddy, Sala, Elisa Maddalena, Heffernan, Jon, Koenraad, Paul M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9237823/
https://www.ncbi.nlm.nih.gov/pubmed/35783681
http://dx.doi.org/10.1021/acsanm.2c01197

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9237823/
https://www.ncbi.nlm.nih.gov/pubmed/35783681
http://dx.doi.org/10.1021/acsanm.2c01197

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