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Control of Morphology and Substrate Etching in InAs/InP Droplet Epitaxy Quantum Dots for Single and Entangled Photon Emitters

[Image: see text] We present a detailed atomic-resolution study of morphology and substrate etching mechanism in InAs/InP droplet epitaxy quantum dots (QDs) grown by metal–organic vapor phase epitaxy via cross-sectional scanning tunneling microscopy (X-STM). Two different etching processes are obser...

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Detalles Bibliográficos
Autores principales:	Gajjela, Raja Sekhar Reddy, Sala, Elisa Maddalena, Heffernan, Jon, Koenraad, Paul M.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	American Chemical Society 2022
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9237823/ https://www.ncbi.nlm.nih.gov/pubmed/35783681 http://dx.doi.org/10.1021/acsanm.2c01197

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