Cargando…

Organismic Memristive Structures With Variable Functionality for Neuroelectronics

In this paper, we report an approach to design nanolayered memristive compositions based on TiO(2)/Al(2)O(3) bilayer structures with analog non-volatile and volatile tuning of the resistance. The structure of the TiO(2) layer drives the physical mechanism underlying the non-volatile resistance switc...

Descripción completa

Detalles Bibliográficos
Autores principales: Andreeva, Natalia V., Ryndin, Eugeny A., Mazing, Dmitriy S., Vilkov, Oleg Y., Luchinin, Victor V.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Frontiers Media S.A. 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9238295/
https://www.ncbi.nlm.nih.gov/pubmed/35774561
http://dx.doi.org/10.3389/fnins.2022.913618
_version_ 1784737016149180416
author Andreeva, Natalia V.
Ryndin, Eugeny A.
Mazing, Dmitriy S.
Vilkov, Oleg Y.
Luchinin, Victor V.
author_facet Andreeva, Natalia V.
Ryndin, Eugeny A.
Mazing, Dmitriy S.
Vilkov, Oleg Y.
Luchinin, Victor V.
author_sort Andreeva, Natalia V.
collection PubMed
description In this paper, we report an approach to design nanolayered memristive compositions based on TiO(2)/Al(2)O(3) bilayer structures with analog non-volatile and volatile tuning of the resistance. The structure of the TiO(2) layer drives the physical mechanism underlying the non-volatile resistance switching, which can be changed from electronic to ionic, enabling the synaptic behavior emulation. The presence of the anatase phase in the amorphous TiO(2) layer induces the resistive switching mechanism due to electronic processes. In this case, the switching of the resistance within the range of seven orders of magnitude is experimentally observed. In the bilayer with amorphous titanium dioxide, the participation of ionic processes in the switching mechanism results in narrowing the tuning range down to 2–3 orders of magnitude and increasing the operating voltages. In this way, a combination of TiO(2)/Al(2)O(3) bilayers with inert electrodes enables synaptic behavior emulation, while active electrodes induce the neuronal behavior caused by cation density variation in the active Al(2)O(3) layer of the structure. We consider that the proposed approach could help to explore the memristive capabilities of nanolayered compositions in a more functional way, enabling implementation of artificial neural network algorithms at the material level and simplifying neuromorphic layouts, while maintaining all benefits of neuromorphic architectures.
format Online
Article
Text
id pubmed-9238295
institution National Center for Biotechnology Information
language English
publishDate 2022
publisher Frontiers Media S.A.
record_format MEDLINE/PubMed
spelling pubmed-92382952022-06-29 Organismic Memristive Structures With Variable Functionality for Neuroelectronics Andreeva, Natalia V. Ryndin, Eugeny A. Mazing, Dmitriy S. Vilkov, Oleg Y. Luchinin, Victor V. Front Neurosci Neuroscience In this paper, we report an approach to design nanolayered memristive compositions based on TiO(2)/Al(2)O(3) bilayer structures with analog non-volatile and volatile tuning of the resistance. The structure of the TiO(2) layer drives the physical mechanism underlying the non-volatile resistance switching, which can be changed from electronic to ionic, enabling the synaptic behavior emulation. The presence of the anatase phase in the amorphous TiO(2) layer induces the resistive switching mechanism due to electronic processes. In this case, the switching of the resistance within the range of seven orders of magnitude is experimentally observed. In the bilayer with amorphous titanium dioxide, the participation of ionic processes in the switching mechanism results in narrowing the tuning range down to 2–3 orders of magnitude and increasing the operating voltages. In this way, a combination of TiO(2)/Al(2)O(3) bilayers with inert electrodes enables synaptic behavior emulation, while active electrodes induce the neuronal behavior caused by cation density variation in the active Al(2)O(3) layer of the structure. We consider that the proposed approach could help to explore the memristive capabilities of nanolayered compositions in a more functional way, enabling implementation of artificial neural network algorithms at the material level and simplifying neuromorphic layouts, while maintaining all benefits of neuromorphic architectures. Frontiers Media S.A. 2022-06-14 /pmc/articles/PMC9238295/ /pubmed/35774561 http://dx.doi.org/10.3389/fnins.2022.913618 Text en Copyright © 2022 Andreeva, Ryndin, Mazing, Vilkov and Luchinin. https://creativecommons.org/licenses/by/4.0/This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) and the copyright owner(s) are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms.
spellingShingle Neuroscience
Andreeva, Natalia V.
Ryndin, Eugeny A.
Mazing, Dmitriy S.
Vilkov, Oleg Y.
Luchinin, Victor V.
Organismic Memristive Structures With Variable Functionality for Neuroelectronics
title Organismic Memristive Structures With Variable Functionality for Neuroelectronics
title_full Organismic Memristive Structures With Variable Functionality for Neuroelectronics
title_fullStr Organismic Memristive Structures With Variable Functionality for Neuroelectronics
title_full_unstemmed Organismic Memristive Structures With Variable Functionality for Neuroelectronics
title_short Organismic Memristive Structures With Variable Functionality for Neuroelectronics
title_sort organismic memristive structures with variable functionality for neuroelectronics
topic Neuroscience
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9238295/
https://www.ncbi.nlm.nih.gov/pubmed/35774561
http://dx.doi.org/10.3389/fnins.2022.913618
work_keys_str_mv AT andreevanataliav organismicmemristivestructureswithvariablefunctionalityforneuroelectronics
AT ryndineugenya organismicmemristivestructureswithvariablefunctionalityforneuroelectronics
AT mazingdmitriys organismicmemristivestructureswithvariablefunctionalityforneuroelectronics
AT vilkovolegy organismicmemristivestructureswithvariablefunctionalityforneuroelectronics
AT luchininvictorv organismicmemristivestructureswithvariablefunctionalityforneuroelectronics