Performance enhancement of ultraviolet-C AlGaN laser diode

The internal quantum efficiency (IQE) of deep ultraviolet (DUV) AlGaN-based laser diode (LD) emitting, in the wavelength region between 260 and 279 nm, is improved by proposing a quaternary-layer AlGaInN between the p-doped electron blocking layer (EBL) and the p-doped waveguide. This leads to an in...

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Detalles Bibliográficos
Autores principales: Ali, Shazma, Usman, Muhammad
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Berlin Heidelberg 2022
Materias:
Regular Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9255468/
https://www.ncbi.nlm.nih.gov/pubmed/35813181
http://dx.doi.org/10.1140/epjp/s13360-022-03007-9
Descripción
Sumario:The internal quantum efficiency (IQE) of deep ultraviolet (DUV) AlGaN-based laser diode (LD) emitting, in the wavelength region between 260 and 279 nm, is improved by proposing a quaternary-layer AlGaInN between the p-doped electron blocking layer (EBL) and the p-doped waveguide. This leads to an increase in the carrier concentration in the active region of the proposed LD. The radiative recombination rate is improved by 74% in the proposed LD. The current density is reduced from 21 kA/cm(2) (reference LD) to 6.13 kA/cm(2) (proposed LD). The proposed LD has a 71% higher internal quantum efficiency than the reference LD. Using SiLENSe™ 6.3, we analyzed both structures numerically.

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