Performance enhancement of ultraviolet-C AlGaN laser diode

The internal quantum efficiency (IQE) of deep ultraviolet (DUV) AlGaN-based laser diode (LD) emitting, in the wavelength region between 260 and 279 nm, is improved by proposing a quaternary-layer AlGaInN between the p-doped electron blocking layer (EBL) and the p-doped waveguide. This leads to an increase in the carrier concentration in the active region of the proposed LD. The radiative recombination rate is improved by 74% in the proposed LD. The current density is reduced from 21 kA/cm(2) (reference LD) to 6.13 kA/cm(2) (proposed LD). The proposed LD has a 71% higher internal quantum efficiency than the reference LD. Using SiLENSe™ 6.3, we analyzed both structures numerically.