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Performance enhancement of ultraviolet-C AlGaN laser diode
The internal quantum efficiency (IQE) of deep ultraviolet (DUV) AlGaN-based laser diode (LD) emitting, in the wavelength region between 260 and 279 nm, is improved by proposing a quaternary-layer AlGaInN between the p-doped electron blocking layer (EBL) and the p-doped waveguide. This leads to an in...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer Berlin Heidelberg
2022
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9255468/ https://www.ncbi.nlm.nih.gov/pubmed/35813181 http://dx.doi.org/10.1140/epjp/s13360-022-03007-9 |