Cargando…

Performance enhancement of ultraviolet-C AlGaN laser diode

The internal quantum efficiency (IQE) of deep ultraviolet (DUV) AlGaN-based laser diode (LD) emitting, in the wavelength region between 260 and 279 nm, is improved by proposing a quaternary-layer AlGaInN between the p-doped electron blocking layer (EBL) and the p-doped waveguide. This leads to an in...

Descripción completa

Detalles Bibliográficos
Autores principales:	Ali, Shazma, Usman, Muhammad
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer Berlin Heidelberg 2022
Materias:	Regular Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9255468/ https://www.ncbi.nlm.nih.gov/pubmed/35813181 http://dx.doi.org/10.1140/epjp/s13360-022-03007-9

Ejemplares similares

On the p-AlGaN/n-AlGaN/p-AlGaN Current Spreading Layer for AlGaN-based Deep Ultraviolet Light-Emitting Diodes
por: Che, Jiamang, et al.
Publicado: (2018)

Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors
por: Fan, Feng-Hsu, et al.
Publicado: (2017)

Ultraviolet-C AlGaN Resonant-Cavity Light-Emitting Diodes with Thermal Stability Pipe-AlGaN-Distributed Bragg Reflectors
por: Chen, Kuei-Ting, et al.
Publicado: (2023)

Calculating the Effect of AlGaN Dielectric Layers in a Polarization Tunnel Junction on the Performance of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes
por: Wang, Yong, et al.
Publicado: (2021)

Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes
por: Hu, Hongpo, et al.
Publicado: (2017)

Research Progress of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
por: Xu, Ruiqiang, et al.
Publicado: (2023)

The marvelous optical performance of AlGaN-based deep ultraviolet light-emitting diodes with AlInGaN-based last quantum barrier and step electron blocking layer
por: Jamil, Tariq, et al.
Publicado: (2021)

Improving the Current Spreading by Locally Modulating the Doping Type in the n-AlGaN Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
por: Che, Jiamang, et al.
Publicado: (2019)

Nanoparticle-Doped Polydimethylsiloxane Fluid Enhances the Optical Performance of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes
por: Ye, Zhi Ting, et al.
Publicado: (2019)

Enhanced Performance of AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Chirped Superlattice Electron Deceleration Layer
por: Hu, Jiahui, et al.
Publicado: (2019)

Large enhancement of light extraction efficiency in AlGaN-based nanorod ultraviolet light-emitting diode structures
por: Ryu, Han-Youl
Publicado: (2014)

Using a Multi-Layer Stacked AlGaN/GaN Structure to Improve the Current Spreading Performance of Ultraviolet Light-Emitting Diodes
por: Wang, Yanli, et al.
Publicado: (2020)

A Novel Bidirectional AlGaN/GaN ESD Protection Diode
por: Yao, Bin, et al.
Publicado: (2022)

Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs
por: Chang, Tzu-Hsuan, et al.
Publicado: (2017)

Porous AlGaN-Based Ultraviolet Distributed Bragg Reflectors
por: Griffin, Peter, et al.
Publicado: (2018)

Dual-functional ultraviolet photodetector with graphene electrodes on AlGaN/GaN heterostructure
por: Pandit, Bhishma, et al.
Publicado: (2020)

Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode
por: Zhang, Haitao, et al.
Publicado: (2021)

Anomalous Photocurrent Reversal Due to Hole Traps in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes
por: Lim, Seungyoung, et al.
Publicado: (2022)

AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Thermally Oxidized Al(x)Ga(2–x)O(3) Sidewalls
por: Wang, Tien-Yu, et al.
Publicado: (2022)

High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers
por: Lee, Ya-Ju, et al.
Publicado: (2014)

Improved Performance of Electron Blocking Layer Free AlGaN Deep Ultraviolet Light-Emitting Diodes Using Graded Staircase Barriers
por: Jain, Barsha, et al.
Publicado: (2021)

Gate-controlled amplifiable ultraviolet AlGaN/GaN high-electron-mobility phototransistor
por: Baek, Seung-Hye, et al.
Publicado: (2021)

Influence of Quantum-Well Width on the Electroluminescence Properties of AlGaN Deep Ultraviolet Light-Emitting Diodes at Different Temperatures
por: Tan, Shuxin, et al.
Publicado: (2018)

The detrimental effect of AlGaN barrier quality on carrier dynamics in AlGaN/GaN interface
por: Podlipskas, Žydrūnas, et al.
Publicado: (2019)

The influences of AlGaN barrier epitaxy in multiple quantum wells on the optoelectrical properties of AlGaN-based deep ultra-violet light-emitting diodes
por: Wang, Tien-Yu, et al.
Publicado: (2023)

Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors
por: Wang, Haiping, et al.
Publicado: (2022)

A Novel AlGaN/GaN Transient Voltage Suppression Diode with Bidirectional Clamp Capability
por: He, Zhiyuan, et al.
Publicado: (2022)

Improved carrier injection of AlGaN-based deep ultraviolet light emitting diodes with graded superlattice electron blocking layers
por: So, Byeongchan, et al.
Publicado: (2018)

AlGaN Nanowires for Ultraviolet Light-Emitting: Recent Progress, Challenges, and Prospects
por: Zhao, Songrui, et al.
Publicado: (2020)

Optimization of AlGaN-Based Deep Ultraviolet Laser Diodes with Graded Rectangular Superlattice Electron Blocking Layer and Graded Trapezoidal Superlattice Hole Blocking Layer
por: Zhang, Aoxiang, et al.
Publicado: (2022)

Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic
por: Wu, Tian-Li, et al.
Publicado: (2020)

A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer
por: Sun, Youlei, et al.
Publicado: (2019)

Optimizing metal/n-AlGaN contact by recessed AlGaN heterostructure with a polarization effect
por: Chen, Yuxuan, et al.
Publicado: (2023)

The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors
por: Besendörfer, Sven, et al.
Publicado: (2020)

Theoretical and Experimental Study on AlGaN/GaN Schottky Barrier Diode on Si Substrate with Double-Heterojunction
por: Sun, Tao, et al.
Publicado: (2020)

Graphene/AlGaN/GaN RF Switch
por: Yashchyshyn, Yevhen, et al.
Publicado: (2021)

Theoretical Optical Output Power Improvement of InGaN-Based Violet Laser Diode Using AlGaN/GaN Composite Last Quantum Barrier
por: Zhang, Zhenzhuo, et al.
Publicado: (2022)

Progress on AlGaN-based solar-blind ultraviolet photodetectors and focal plane arrays
por: Cai, Qing, et al.
Publicado: (2021)

Role of Vacancy Defects in Reducing the Responsivity of AlGaN Schottky Barrier Ultraviolet Detectors
por: Huang, Yujie, et al.
Publicado: (2022)

Light interaction in sapphire/MgF(2)/Al triple-layer omnidirectional reflectors in AlGaN-based near ultraviolet light-emitting diodes
por: Lee, Keon Hwa, et al.
Publicado: (2015)

Cannot write session to /tmp/vufind_sessions/sess_6s55ab7bn6tdhvhh33np8rr7uj