High output mode-locked laser empowered by defect regulation in 2D Bi(2)O(2)Se saturable absorber

Atomically thin Bi(2)O(2)Se has emerged as a novel two-dimensional (2D) material with an ultrabroadband nonlinear optical response, high carrier mobility and excellent air stability, showing great potential for the realization of optical modulators. Here, we demonstrate a femtosecond solid-state laser at 1.0 µm with Bi(2)O(2)Se nanoplates as a saturable absorber (SA). Upon further defect regulation in 2D Bi(2)O(2)Se, the average power of the mode-locked laser is improved from 421 mW to 665 mW, while the pulse width is decreased from 587 fs to 266 fs. Moderate Ar(+) plasma treatments are employed to precisely regulate the O and Se defect states in Bi(2)O(2)Se nanoplates. Nondegenerate pump-probe measurements show that defect engineering effectively accelerates the trapping rate and defect-assisted Auger recombination rate of photocarriers. The saturation intensity is improved from 3.6 ± 0.2 to 12.8 ± 0.6 MW cm(−2) after the optimized defect regulation. The enhanced saturable absorption and ultrafast carrier lifetime endow the high-performance mode-locked laser with both large output power and short pulse duration.