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Transient Response and Firing Behaviors of Memristive Neuron Circuit
The signal transmission mechanism of the Resistor-Capacitor (RC) circuit is similar to the intracellular and extracellular signal propagating mechanism of the neuron. Thus, the RC circuit can be utilized as the circuit model of the neuron cell membrane. However, resistors are electronic components w...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Frontiers Media S.A.
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9257141/ https://www.ncbi.nlm.nih.gov/pubmed/35812218 http://dx.doi.org/10.3389/fnins.2022.922086 |
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author | Fang, Xiaoyan Tan, Yao Zhang, Fengqing Duan, Shukai Wang, Lidan |
author_facet | Fang, Xiaoyan Tan, Yao Zhang, Fengqing Duan, Shukai Wang, Lidan |
author_sort | Fang, Xiaoyan |
collection | PubMed |
description | The signal transmission mechanism of the Resistor-Capacitor (RC) circuit is similar to the intracellular and extracellular signal propagating mechanism of the neuron. Thus, the RC circuit can be utilized as the circuit model of the neuron cell membrane. However, resistors are electronic components with the fixed-resistance and have no memory properties. A memristor is a promising neuro-morphological electronic device with nonvolatile, switching, and nonlinear characteristics. First of all, we consider replacing the resistor in the RC neuron circuit with a memristor, which is named the Memristor-Capacitor (MC) circuit, then the MC neuron model is constructed. We compare the charging and discharging processes between the RC and MC neuron circuits. Secondly, two models are compared under the different external stimuli. Finally, the synchronous and asynchronous activities of the RC and MC neuron circuits are performed. Extensive experimental results suggest that the charging and discharging speed of the MC neuron circuit is faster than that of the RC neuron circuit. Given sufficient time and proper external stimuli, the RC and MC neuron circuits can produce the action potentials. The synchronous and asynchronous phenomena in the two neuron circuits reproduce nonlinear dynamic behaviors of the biological neurons. |
format | Online Article Text |
id | pubmed-9257141 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | Frontiers Media S.A. |
record_format | MEDLINE/PubMed |
spelling | pubmed-92571412022-07-07 Transient Response and Firing Behaviors of Memristive Neuron Circuit Fang, Xiaoyan Tan, Yao Zhang, Fengqing Duan, Shukai Wang, Lidan Front Neurosci Neuroscience The signal transmission mechanism of the Resistor-Capacitor (RC) circuit is similar to the intracellular and extracellular signal propagating mechanism of the neuron. Thus, the RC circuit can be utilized as the circuit model of the neuron cell membrane. However, resistors are electronic components with the fixed-resistance and have no memory properties. A memristor is a promising neuro-morphological electronic device with nonvolatile, switching, and nonlinear characteristics. First of all, we consider replacing the resistor in the RC neuron circuit with a memristor, which is named the Memristor-Capacitor (MC) circuit, then the MC neuron model is constructed. We compare the charging and discharging processes between the RC and MC neuron circuits. Secondly, two models are compared under the different external stimuli. Finally, the synchronous and asynchronous activities of the RC and MC neuron circuits are performed. Extensive experimental results suggest that the charging and discharging speed of the MC neuron circuit is faster than that of the RC neuron circuit. Given sufficient time and proper external stimuli, the RC and MC neuron circuits can produce the action potentials. The synchronous and asynchronous phenomena in the two neuron circuits reproduce nonlinear dynamic behaviors of the biological neurons. Frontiers Media S.A. 2022-06-22 /pmc/articles/PMC9257141/ /pubmed/35812218 http://dx.doi.org/10.3389/fnins.2022.922086 Text en Copyright © 2022 Fang, Tan, Zhang, Duan and Wang. https://creativecommons.org/licenses/by/4.0/This is an open-access article distributed under the terms of the Creative Commons Attribution License (CC BY). The use, distribution or reproduction in other forums is permitted, provided the original author(s) and the copyright owner(s) are credited and that the original publication in this journal is cited, in accordance with accepted academic practice. No use, distribution or reproduction is permitted which does not comply with these terms. |
spellingShingle | Neuroscience Fang, Xiaoyan Tan, Yao Zhang, Fengqing Duan, Shukai Wang, Lidan Transient Response and Firing Behaviors of Memristive Neuron Circuit |
title | Transient Response and Firing Behaviors of Memristive Neuron Circuit |
title_full | Transient Response and Firing Behaviors of Memristive Neuron Circuit |
title_fullStr | Transient Response and Firing Behaviors of Memristive Neuron Circuit |
title_full_unstemmed | Transient Response and Firing Behaviors of Memristive Neuron Circuit |
title_short | Transient Response and Firing Behaviors of Memristive Neuron Circuit |
title_sort | transient response and firing behaviors of memristive neuron circuit |
topic | Neuroscience |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9257141/ https://www.ncbi.nlm.nih.gov/pubmed/35812218 http://dx.doi.org/10.3389/fnins.2022.922086 |
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