Ultra-wide bandgap semiconductor Ga(2)O(3) power diodes

Ultra-wide bandgap semiconductor Ga(2)O(3) based electronic devices are expected to perform beyond wide bandgap counterparts GaN and SiC. However, the reported power figure-of-merit hardly can exceed, which is far below the projected Ga(2)O(3) material limit. Major obstacles are high breakdown voltage requires low doping material and PN junction termination, contradicting with low specific on-resistance and simultaneous achieving of n- and p-type doping, respectively. In this work, we demonstrate that Ga(2)O(3) heterojunction PN diodes can overcome above challenges. By implementing the holes injection in the Ga(2)O(3), bipolar transport can induce conductivity modulation and low resistance in a low doping Ga(2)O(3) material. Therefore, breakdown voltage of 8.32 kV, specific on-resistance of 5.24 mΩ⋅cm(2), power figure-of-merit of 13.2 GW/cm(2), and turn-on voltage of 1.8 V are achieved. The power figure-of-merit value surpasses the 1-D unipolar limit of GaN and SiC. Those Ga(2)O(3) power diodes demonstrate their great potential for next-generation power electronics applications.