Ultra-wide bandgap semiconductor Ga(2)O(3) power diodes

Ultra-wide bandgap semiconductor Ga(2)O(3) based electronic devices are expected to perform beyond wide bandgap counterparts GaN and SiC. However, the reported power figure-of-merit hardly can exceed, which is far below the projected Ga(2)O(3) material limit. Major obstacles are high breakdown volta...

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Detalles Bibliográficos
Autores principales: Zhang, Jincheng, Dong, Pengfei, Dang, Kui, Zhang, Yanni, Yan, Qinglong, Xiang, Hu, Su, Jie, Liu, Zhihong, Si, Mengwei, Gao, Jiacheng, Kong, Moufu, Zhou, Hong, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9259626/
https://www.ncbi.nlm.nih.gov/pubmed/35794123
http://dx.doi.org/10.1038/s41467-022-31664-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9259626/
https://www.ncbi.nlm.nih.gov/pubmed/35794123
http://dx.doi.org/10.1038/s41467-022-31664-y

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