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Visible Light-Induced Room-Temperature Formaldehyde Gas Sensor Based on Porous Three-Dimensional ZnO Nanorod Clusters with Rich Oxygen Vacancies

[Image: see text] Oxygen vacancy (V(O)) is a kind of primary point defect that extensively exists in semiconductor metal oxides (SMOs). Owing to some of its inherent qualities, an artificial manipulation of V(O) content in one material has evolved into a hot research field, which is deemed to be cap...

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Detalles Bibliográficos
Autores principales: Zhang, Bo, Wang, Jing, Wei, Qufu, Yu, Pingping, Zhang, Shuai, Xu, Yin, Dong, Yue, Ni, Yi, Ao, Jinping, Xia, Yi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9260931/
https://www.ncbi.nlm.nih.gov/pubmed/35811897
http://dx.doi.org/10.1021/acsomega.2c02613
Descripción
Sumario:[Image: see text] Oxygen vacancy (V(O)) is a kind of primary point defect that extensively exists in semiconductor metal oxides (SMOs). Owing to some of its inherent qualities, an artificial manipulation of V(O) content in one material has evolved into a hot research field, which is deemed to be capable of modulating band structures and surface characteristics of SMOs. Specific to the gas-sensing area, V(O) engineering of sensing materials has become an effective means in enhancing sensor response and inducing light-enhanced sensing. In this work, a high-efficiency microwave hydrothermal treatment was utilized to prepare a V(O)-rich ZnO sample without additional reagents. The X-ray photoelectron spectroscopy test revealed a significant increase in V(O) proportion, which was from 9.21% in commercial ZnO to 36.27% in synthesized V(O)-rich ZnO possessing three-dimensional and air-permeable microstructures. The subsequent UV–vis–NIR absorption and photoluminescence spectroscopy indicated an extension absorption in the visible region and band gap reduction of V(O)-rich ZnO. It turned out that the V(O)-rich ZnO-based sensor exhibited a considerable response of 63% toward 1 ppm HCHO at room temperature (RT, 25 °C) under visible light irradiation. Particularly, the response/recovery time was only 32/20 s for 1 ppm HCHO and further shortened to 10/5 s for 10 ppm HCHO, which was an excellent performance and comparable to most sensors working at high temperatures. The results in this work strongly suggested the availability of V(O) engineering and also provided a meaningful candidate for researchers to develop high-performance RT sensors detecting volatile organic compounds.