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H(2)+CO(2) Synergistic Plasma Positioning Carboxyl Defects in g-C(3)N(4) with Engineered Electronic Structure and Active Sites for Efficient Photocatalytic H(2) Evolution

Defective functional-group-endowed polymer semiconductors, which have unique photoelectric properties and rapid carrier separation properties, are an emerging type of high-performance photocatalyst for various energy and environmental applications. However, traditional oxidation etching chemical met...

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Autores principales: Wang, Daqian, Zhang, Zhihao, Xu, Shuchuan, Guo, Ying, Kang, Shifei, Chang, Xijiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9266665/
https://www.ncbi.nlm.nih.gov/pubmed/35806384
http://dx.doi.org/10.3390/ijms23137381
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author Wang, Daqian
Zhang, Zhihao
Xu, Shuchuan
Guo, Ying
Kang, Shifei
Chang, Xijiang
author_facet Wang, Daqian
Zhang, Zhihao
Xu, Shuchuan
Guo, Ying
Kang, Shifei
Chang, Xijiang
author_sort Wang, Daqian
collection PubMed
description Defective functional-group-endowed polymer semiconductors, which have unique photoelectric properties and rapid carrier separation properties, are an emerging type of high-performance photocatalyst for various energy and environmental applications. However, traditional oxidation etching chemical methods struggle to introduce defects or produce special functional group structures gently and controllably, which limits the implementation and application of the defective functional group modification strategy. Here, with the surface carboxyl modification of graphitic carbon nitride (g-C(3)N(4)) photocatalyst as an example, we show for the first time the feasibility and precise modification potential of the non-thermal plasma method. In this method, the microwave plasma technique is employed to generate highly active plasma in a combined H(2)+CO(2) gas environment. The plasma treatment allows for scalable production of high-quality defective carboxyl group-endowed g-C(3)N(4) nanosheets with mesopores. The rapid H(2)+CO(2) plasma immersion treatment can precisely tune the electronic and band structures of g-C(3)N(4) nanosheets within 10 min. This conjoint approach also promotes charge-carrier separation and accelerates the photocatalyst-catalyzed H(2) evolution rate from 1.68 mmol h(−1)g(−1) (raw g-C(3)N(4)) to 8.53 mmol h(−1)g(−1) (H(2)+CO(2)-pCN) under Xenon lamp irradiation. The apparent quantum yield (AQY) of the H(2)+CO(2)-pCN with the presence of 5 wt.% Pt cocatalyst is 4.14% at 450 nm. Combined with density functional theory calculations, we illustrate that the synergistic N vacancy generation and carboxyl species grafting modifies raw g-C(3)N(4) materials by introducing ideal defective carboxyl groups into the framework of heptazine ring g-C(3)N(4), leading to significantly optimized electronic structure and active sites for efficient photocatalytic H(2) evolution. The 5.08-times enhancement in the photocatalytic H(2) evolution over the as-developed catalysts reveal the potential and maneuverability of the non-thermal plasma method in positioning carboxyl defects and mesoporous morphology. This work presents new understanding about the defect engineering mechanism in g-C(3)N(4) semiconductors, and thus paves the way for rational design of effective polymeric photocatalysts through advanced defective functional group engineering techniques evolving CO(2) as the industrial carrier gas.
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spelling pubmed-92666652022-07-09 H(2)+CO(2) Synergistic Plasma Positioning Carboxyl Defects in g-C(3)N(4) with Engineered Electronic Structure and Active Sites for Efficient Photocatalytic H(2) Evolution Wang, Daqian Zhang, Zhihao Xu, Shuchuan Guo, Ying Kang, Shifei Chang, Xijiang Int J Mol Sci Article Defective functional-group-endowed polymer semiconductors, which have unique photoelectric properties and rapid carrier separation properties, are an emerging type of high-performance photocatalyst for various energy and environmental applications. However, traditional oxidation etching chemical methods struggle to introduce defects or produce special functional group structures gently and controllably, which limits the implementation and application of the defective functional group modification strategy. Here, with the surface carboxyl modification of graphitic carbon nitride (g-C(3)N(4)) photocatalyst as an example, we show for the first time the feasibility and precise modification potential of the non-thermal plasma method. In this method, the microwave plasma technique is employed to generate highly active plasma in a combined H(2)+CO(2) gas environment. The plasma treatment allows for scalable production of high-quality defective carboxyl group-endowed g-C(3)N(4) nanosheets with mesopores. The rapid H(2)+CO(2) plasma immersion treatment can precisely tune the electronic and band structures of g-C(3)N(4) nanosheets within 10 min. This conjoint approach also promotes charge-carrier separation and accelerates the photocatalyst-catalyzed H(2) evolution rate from 1.68 mmol h(−1)g(−1) (raw g-C(3)N(4)) to 8.53 mmol h(−1)g(−1) (H(2)+CO(2)-pCN) under Xenon lamp irradiation. The apparent quantum yield (AQY) of the H(2)+CO(2)-pCN with the presence of 5 wt.% Pt cocatalyst is 4.14% at 450 nm. Combined with density functional theory calculations, we illustrate that the synergistic N vacancy generation and carboxyl species grafting modifies raw g-C(3)N(4) materials by introducing ideal defective carboxyl groups into the framework of heptazine ring g-C(3)N(4), leading to significantly optimized electronic structure and active sites for efficient photocatalytic H(2) evolution. The 5.08-times enhancement in the photocatalytic H(2) evolution over the as-developed catalysts reveal the potential and maneuverability of the non-thermal plasma method in positioning carboxyl defects and mesoporous morphology. This work presents new understanding about the defect engineering mechanism in g-C(3)N(4) semiconductors, and thus paves the way for rational design of effective polymeric photocatalysts through advanced defective functional group engineering techniques evolving CO(2) as the industrial carrier gas. MDPI 2022-07-02 /pmc/articles/PMC9266665/ /pubmed/35806384 http://dx.doi.org/10.3390/ijms23137381 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Wang, Daqian
Zhang, Zhihao
Xu, Shuchuan
Guo, Ying
Kang, Shifei
Chang, Xijiang
H(2)+CO(2) Synergistic Plasma Positioning Carboxyl Defects in g-C(3)N(4) with Engineered Electronic Structure and Active Sites for Efficient Photocatalytic H(2) Evolution
title H(2)+CO(2) Synergistic Plasma Positioning Carboxyl Defects in g-C(3)N(4) with Engineered Electronic Structure and Active Sites for Efficient Photocatalytic H(2) Evolution
title_full H(2)+CO(2) Synergistic Plasma Positioning Carboxyl Defects in g-C(3)N(4) with Engineered Electronic Structure and Active Sites for Efficient Photocatalytic H(2) Evolution
title_fullStr H(2)+CO(2) Synergistic Plasma Positioning Carboxyl Defects in g-C(3)N(4) with Engineered Electronic Structure and Active Sites for Efficient Photocatalytic H(2) Evolution
title_full_unstemmed H(2)+CO(2) Synergistic Plasma Positioning Carboxyl Defects in g-C(3)N(4) with Engineered Electronic Structure and Active Sites for Efficient Photocatalytic H(2) Evolution
title_short H(2)+CO(2) Synergistic Plasma Positioning Carboxyl Defects in g-C(3)N(4) with Engineered Electronic Structure and Active Sites for Efficient Photocatalytic H(2) Evolution
title_sort h(2)+co(2) synergistic plasma positioning carboxyl defects in g-c(3)n(4) with engineered electronic structure and active sites for efficient photocatalytic h(2) evolution
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9266665/
https://www.ncbi.nlm.nih.gov/pubmed/35806384
http://dx.doi.org/10.3390/ijms23137381
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